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ECP200D
Product Features
* 400 - 2300 MHz * +33 dBm P1dB * +51 dBm Output IP3 * 18 dB Gain @ 900 MHz * +5V Single Positive Supply * MTTF > 100 Years * 16-pin 4x4mm Lead-free/Green/ RoHS-compliant QFN Package
The Communications Edge TM Product Information
2 Watt, High Linearity InGaP HBT Amplifier
Product Description
The ECP200D is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +51 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in an industry standard in a lead-free/ green/RoHS-compliant 16-pin 4x4mm QFN surfacemount package. All devices are 100% RF and DC tested. The ECP200D is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the ECP200D to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations.
Functional Diagram
Vbias N/C 16 Vref 1 N/C 2 RF IN 3 N/C 4 5 N/C 6 N/C 7 N/C 8 N/C 15 N/C 14 N/C 13 12 N/C 11 RF OUT 10 RF OUT 9 N/C
Applications
* Final stage amplifiers for Repeaters * Mobile Infrastructure
Function Vref RF Input RF Output Vbias GND N/C or GND
Pin No. 1 3 10, 11 16 Backside Paddle 2, 4-9, 12-15
Specifications (1)
Parameter
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss P1dB Output IP3 (2) IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Typical Performance (4)
Units Min
MHz MHz dB dB dB dBm dBm dBm dBm dB mA V 700 400 9 2140 10 20 6.8 +33.2 +48 +27.5 +25.3 7.7 800 +5 900
Typ
Max
2300
Parameter
Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. P1dB Output IP3 IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz dB dB dB dBm dBm dBm dBm dB 8.0 900 18 -18 -11 +33 +49 +27
Typical
1960 11 -19 -6.8 +33.4 +51 +27.5 +25.3 7.3 7.7 +5 V @ 800 mA 2140 10 -20 -6.8 +33.2 +48
+32 +47
wCDMA Channel Power
@ -45 dBc ACLR
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure Operating Current Range, Icc (3) Device Voltage, Vcc
Noise Figure Device Bias (3)
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
1. Test conditions unless otherwise noted: 25 C, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 22mA of current when used with a series bias resistor of R1=15. (ie. total device current typically will be 822 mA.)
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature -40 to +85 C -65 to +150 C +28 dBm +8 V 1400 mA 8W +250 C
Rating
Ordering Information
Part No.
ECP200D-G ECP200D-PCB900 ECP200D-PCB1960 ECP200D-PCB2140
Description
2 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)
900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 6 April 2006
ECP200D
Gain / Maximum Stable Gain
40
The Communications Edge TM Product Information
2 Watt, High Linearity InGaP HBT Amplifier
S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 C, unmatched 50 ohm system)
Typical Device Data
S11
1.0
0.
0.8
S22
1.0
0.
6
Swp Max 4000MHz
2. 0
6
Swp Max 4000MHz
2. 0
3.
0
30 Gain (dB) 25 20 15 10
-0. 2 0. 2
4.
0
10.0
3. 0
0.2
0.4
0.6
0.8
1.0
2.0
4.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
5.0
0
10.0
0 50 550 1050 1550 Frequency (MHz) 2050 2500
-0
.4
-0
.0
-2
.6
-0
-0
.6
-0. 8
-0.8
-2
.0
Swp Min 50MHz
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increments. S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-0.80 -0.60 -0.64 -0.76 -0.89 -1.08 -1.54 -2.48 -5.25 -16.57 -7.12 -2.68 -1.34 -0.80 -0.49 -0.53 -0.50
-177.34 178.13 174.02 166.66 158.43 150.86 141.98 131.55 115.96 118.86 -149.33 -169.62 175.50 164.47 154.67 146.29 136.44
27.72 22.13 16.20 10.54 7.75 6.09 5.29 5.24 5.83 6.03 3.81 0.37 -3.32 -6.81 -9.46 -12.22 -14.55
107.79 96.85 89.13 80.79 72.52 64.42 54.50 41.62 20.85 -9.41 -47.41 -72.56 -89.96 -102.05 -112.59 -121.23 -128.37
-1.0
-45.30 -43.21 -44.86 -42.84 -44.05 -43.61 -42.64 -39.25 -39.43 -37.39 -39.26 -40.69 -45.63 -50.41 -48.80 -50.62 -49.46
19.06 11.92 -4.05 6.99 2.89 -7.72 -4.97 -33.49 -52.73 -100.38 -126.48 -169.19 -163.76 149.05 157.02 69.74 79.86
-0.81 -0.79 -0.62 -0.35 -0.47 -0.66 -0.73 -0.82 -0.58 -0.58 -0.42 -0.52 -0.53 -0.61 -0.62 -0.68 -0.77
-1.0
-139.65 -158.43 -168.80 -177.29 179.92 179.00 177.98 176.35 175.10 174.84 170.66 169.04 167.35 164.01 162.14 157.85 156.81
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014" Getek, single layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments.
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 6 April 2006
-
.4
Swp Min 50MHz
-4
3. 0
-4
.0
5
.0
-5.
0
2 -0.
- 5. 0
-1 0.
0
.0
0.2
5 .0
0.
4
-10.0
-3
0.
4
35
DB(|S(2,1)|)
DB(GMax())
0. 8
3.
0
4.
0
5.0
10 .0
ECP200D
Typical RF Performance at 25 C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+17 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
2 Watt, High Linearity InGaP HBT Amplifier
900 MHz Application Circuit (ECP200D-PCB900)
Vsupply = +5V
ID=R4 R=0 Ohm ID=R1 R=15 Ohm ID=C4 C=1e7 pF ID=C5 C=1000 pF ID=R2 R=22 Ohm ID=C7 C=1000 pF ID=C6 C=10 pF
16 15 14 13 12
+5.6V Zener
900 MHz 18 dB -18 dB -11 dB +33 dBm +49 dBm +27 dBm 8.0 dB +5 V 800 mA
ID=C1 C=56 pF TLINP ID=TL1 Z0=50 Ohm L=75 mil Eeff=3.16 Loss=0 F0=0 GHz
1
ID=R3 R=51 Ohm ID=C11 R=0 Ohm ID=C2 C=56 pF
2
11
ID=L1 L=18 nH size 1008
ID=C3 C=56 pF
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
3
ID=ECP200D
10
4
9
Noise Figure Device / Supply Voltage Quiescent Current (1)
ID=C8 C=8.2 pF
5 6 7 8
TLINP ID=TL2 Z0=50 Ohm L=375 mil Eeff=3.16 Loss=0 F0=0 GHz
ID=C9 C=10 pF
C9 should be placed at silk screen marker "8" on the WJ evaluation board.
C8 should be placed at silk screen marker "B" on the WJ evaluation board.
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 10, 11, and 16.
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
20 19 S21 (dB) S11 (dB) 18 17 16
+25C -40C +85C
0 -5 -10 -15 -20 -25 -30 840
+25C -40C +85C
0 -5 S22 (dB) -10 -15
+25C -40C +85C
15 840
860
880
900
920
940
860
880
900
920
940
-20 840
860
880
900
920
940
Frequency (MHz)
Noise Figure vs. Frequency
10 8 P1dB (dBm) NF (dB) 6 4 2 36 34
Frequency (MHz)
P1dB vs. Frequency
Circuit boards are optimized at 880 MHz
Frequency (MHz)
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 900 MHz
-40
ACPR (dBc)
-40C
860 880
32 30 28
-50
-60
-40 C +25 C +85 C
-40C
0 840 860 880
+25C
900
+85C
920 940 26 840
+25C
900
+85C
-70
920 940
22
23
24
25
26
27
28
29
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
OIP3 vs. Output Power 55 50 45 40 35
freq. = 900 MHz, 901 MHz, +25 C
OIP3 vs. Frequency 55 50 45 40 35 840
+25 C, +17 dBm/tone
OIP3 vs. Temperature 55 50 45 40 35 -40
freq. = 900 MHz, 901 MHz, +17 dBm/tone
OIP3 (dBm)
OIP3 (dBm)
860
880 900 Frequency (MHz)
920
940
-15
10 35 Temperature (C)
60
85
OIP3 (dBm)
12
14
16 18 20 22 Output Power (dBm)
24
26
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 6 April 2006
ECP200D
Typical RF Performance at 25 C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+17 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
2 Watt, High Linearity InGaP HBT Amplifier
1960 MHz Application Circuit (ECP200D-PCB1960)
Vsupply = +5V
ID=R4 R=0 Ohm ID=R1 R=15 Ohm ID=C4 C=1e7 pF ID=C5 C=1000 pF ID=R2 R=22 Ohm ID=C7 C=1000 pF ID=C6 C=10 pF
16 15 14 13 12
+5.6V Zener
1960 MHz 11 dB -20 dB -6.8 dB +33.4 dBm +51 dBm +27.5 dBm 7.3 dB +5 V 800 mA
ID=C1 C=56 pF TLINP ID=TL1 Z0=50 Ohm L=300 mil Eeff=3.16 Loss=0 F0=0 GHz
ID=R3 R=51 Ohm ID=C11 R=0 Ohm ID=C2 C=56 pF
1
2
11
ID=L1 L=18 nH size 1008
ID=ECP200D
3 10
TLINP ID=TL3 Z0=50 Ohm L=125 mil Eeff=3.16 Loss=0 F0=0 GHz
ID=C3 C=56 pF
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
4
9
Noise Figure Device / Supply Voltage Quiescent Current (1)
ID=C8 C=2.2 pF
5
6
7
8
TLINP ID=TL2 Z0=50 Ohm L=100 mil Eeff=3.16 Loss=0 F0=0 GHz
ID=C10 C=1.5 pF ID=C9 C=3.9 pF
C8 should be placed between silk screen markers "F" and "G" on the WJ evaluation board.
C9 should be placed between silkscreen markers "2" and "3" on the WJ evaluation board. C10 should be placed at silkscreen marker "5" on the WJ evaluation board.
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 10, 11, and 16.
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
13 12 S21 (dB) S11 (dB) 11 10 9
+25C -40C +85C
0 -5 -10 -15 -20 -25 -30 1930
+25C -40C +85C
0 -5 S22 (dB) -10 -15
+25C -40C +85C
8 1930
1940
1950
1960
1970
1980
1990
1940
1950
1960
1970
1980
1990
-20 1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
Noise Figure vs. Frequency
10 8 6 4 2 P1dB (dBm) NF (dB) 36 34 32 30 28
Frequency (MHz)
P1dB vs. Frequency
Circuit boards are optimized at 1960 MHz
Frequency (MHz)
ACPR vs. Channel Power -35 -45 -55 -65 -40 C -75
1990
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 1960 MHz
-40C
0 1930 1940 1950 1960
+25C
1970
+85C
1980 1990 26 1930 1940
-40C
1950
+25C
1960 1970
+85C
1980
ACPR (dBc)
+25 C 26 27
+85 C 28 29
22
23
24
25
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm) OIP3 vs. Output Power 55 50 45 40 35
freq. = 1960 MHz, 1961 MHz, +25 C
OIP3 vs. Frequency 55 50 45 40 35 1930
+25 C, +17 dBm/tone
OIP3 vs. Temperature 55 50 45 40 35 -40
freq. = 1960 MHz, 1961 MHz, +17 dBm/tone
OIP3 (dBm)
OIP3 (dBm)
1940
1950 1960 1970 Frequency (MHz)
1980
1990
-15
10 35 Temperature (C)
60
85
OIP3 (dBm)
12
14
16 18 Output Power (dBm)
20
22
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 6 April 2006
ECP200D
Typical RF Performance at 25 C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+17 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
2 Watt, High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit (ECP200D-PCB2140)
Vsupply = +5V
ID=R4 R=0 Ohm ID=R1 R=15 Ohm ID=C3 C=1e7 pF ID=C4 C=1000 pF ID=R2 R=22 Ohm ID=C6 C=1000 pF ID=C5 C=10 pF
16 15 14 13 12
+5.6V Zener
2140 MHz 10 dB -20 dB -6.8 dB +33.2 dBm +48 dBm +25.3 dBm 7.7 dB +5 V 800 mA
ID=C1 C=56 pF TLINP ID=TL1 Z0=50 Ohm L=175 mil Eeff=3.16 Loss=0 F0=0 GHz
ID=R3 R=51 Ohm ID=C11 R=0 Ohm ID=C2 C=56 pF
1
2
11
ID=L1 L=18 nH size 1008
ID=ECP200D
3 10
TLINP ID=TL3 Z0=50 Ohm L=100 mil Eeff=3.16 Loss=0 F0=0 GHz
ID=C3 C=56 pF
W-CDMA Channel Power
(@ -45 dBc ACLR)
4
9
Noise Figure Device / Supply Voltage Quiescent Current (1)
ID=C8 C=3 pF
5
6
7
8
TLINP ID=TL2 Z0=50 Ohm L=75 mil Eeff=3.16 Loss=0 F0=0 GHz
ID=C9 C=3 pF
ID=C10 C=1.5 pF
C8 should be placed at silk screen marker "D" on the WJ evaluation board.
C9 should be placed at silkscreen marker "2" on the WJ evaluation board. C10 should be placed at silkscreen marker "4" on the WJ evaluation board.
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 10, 11, and 16.
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
12 11 S21 (dB) S11 (dB) 10 9 8
+25C -40C +85C
0 -5 -10 -15 -20 -25 -30 2110
+25C -40C +85C
0 -5 S22 (dB) -10 -15
+25C -40C +85C
7 2110
2120
2130
2140
2150
2160
2170
2120
2130
2140
2150
2160
2170
-20 2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
Noise Figure vs. Frequency
10 8 P1dB (dBm) NF (dB) 6 4 2 36 34
Frequency (MHz)
P1dB vs. Frequency
Circuit boards are optimized at 2140 MHz
Frequency (MHz)
ACPR vs. Channel Power
-35 -40 ACPR (dBc) -45 -50 -55
3GPP W -CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz
32 30 28
-40C
0 2110 2120 2130 2140
+25C
2150
+85C
2160 2170 26 2110 2120
-40C
2130
+25C
2140 2150
+85C
2160 2170
-40 C
-60 22 23 24 25
+25 C
26
+85 C
27
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
OIP3 vs. Frequency 55 50 45 40 35 2110
+25 C, +17 dBm/tone
OIP3 vs. Temperature 55 50 45 40 35 -40
freq. = 2140 MHz, 2141 MHz, +17 dBm/tone
OIP3 vs. Output Power 55 50 45 40 35
freq. = 2140 MHz, 2141 MHz, +25 C
OIP3 (dBm)
OIP3 (dBm)
2120
2130 2140 2150 Frequency (MHz)
2160
2170
-15
10 35 Temperature (C)
60
85
OIP3 (dBm)
12
14
16 18 Output Power (dBm)
20
22
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 6 April 2006
ECP200D
The Communications Edge TM Product Information
2 Watt, High Linearity InGaP HBT Amplifier
This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
ECP200D-G Mechanical Information
Outline Drawing
Product Marking
The component will be marked with an "E200G" designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an "ECP200D" designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard:
Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114
Land Pattern
MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. 2. A heatsink underneath the area of the PCB for the mounted device is highly recommended for proper thermal operation. Damage to the device can occur without the use of one. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. RF trace width depends upon the PC board material and construction. Use 1 oz. Copper minimum. All dimensions are in millimeters (inches). Angles are in degrees.
3. 4.
5. 6. 7. 8.
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2)
MTTF vs. GND Tab Temperature
100000
-40 to +85 C 17.5 C / W 155 C
Notes: 1. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tj is a function of the voltage at pins 10 and 11 and the current applied to pins 10, 11, and 16 and can be calculated by: Tj = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 800 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C.
MTTF (million hrs)
Rating
10000
1000
100 60 70 80 90 100 110 120 Tab Temperature (C)
Specifications and information are subject to change without notice
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
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April 2006

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